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Dielectric screening in atomically thin boron nitride nanosheets.
journal contribution
posted on 2015-01-14, 00:00 authored by Luhua LiLuhua Li, E J Santos, Tan Xing, E Cappelluti, R Roldán, Ying (Ian) ChenYing (Ian) Chen, K Watanabe, T TaniguchiTwo-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide, and many other 2D nanomaterial-based electronic and photonic devices. To optimize the performance of these 2D devices, it is essential to understand the dielectric screening properties of BN nanosheets as a function of the thickness. Here, electric force microscopy along with theoretical calculations based on both state-of-the-art first-principles calculations with van der Waals interactions under consideration, and nonlinear Thomas-Fermi theory models are used to investigate the dielectric screening in high-quality BN nanosheets of different thicknesses. It is found that atomically thin BN nanosheets are less effective in electric field screening, but the screening capability of BN shows a relatively weak dependence on the layer thickness.
History
Journal
Nano Letters: a journal dedicated to nanoscience and nanotechnologyVolume
15Issue
1Pagination
218 - 223Publisher
American Chemical SocietyLocation
United StatesPublisher DOI
ISSN
1530-6992eISSN
1530-6992Language
engPublication classification
C Journal article; C1 Refereed article in a scholarly journalCopyright notice
2014, American Chemical SocietyUsage metrics
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No categories selectedKeywords
boron nitride nanosheetselectric field screeningelectric force microscopy (EFM)first-principles calculationsnonlinear Thomas−Fermi theoryScience & TechnologyPhysical SciencesTechnologyChemistry, MultidisciplinaryChemistry, PhysicalNanoscience & NanotechnologyMaterials Science, MultidisciplinaryPhysics, AppliedPhysics, Condensed MatterChemistryScience & Technology - Other TopicsMaterials SciencePhysicsnonlinear Thomas-Fermi theoryGRAPHENELAYERSMOS2HETEROSTRUCTURESMICROSCOPYCONSTANTCRYSTALS
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