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Enhancement of electrical conductivity in aluminum single crystals by boron treatment in solid state
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posted on 2020-02-01, 00:00 authored by Rimma LapovokRimma Lapovok, Y Amouyal, Y Qi, A Berner, A Kosinova, E Lakin, D A Molodov, E Zolotoyabko© 2019, Springer Science+Business Media, LLC, part of Springer Nature. Electrical conductivity/resistivity of elemental fcc metals, such as Al and Cu, has been investigated intensively for decades, both theoretically and experimentally. Since these metals are of great practical importance for electrical wiring, reducing their resistivity even by a few percent may have very strong impact on their application effectiveness. In this paper, we report on electrical resistivity measurements in Al single crystals grown by the Bridgman method. We found that their resistivity at room temperature decreases by 11.5% upon heat treatment in a boron environment at 600 °C, i.e., well below the melting temperature of Al (Tm = 660 °C). The residual resistivity indeed reaches its lower limit dictated by electron–phonon interaction at room temperature. We explain this effect by the boron-induced formation of distorted regions at the surface of the Al crystals. These regions are 30–50 μm in size and comprise finer grains with an average size of 5 μm, separated by low-angle grain boundaries. Resistivity reduction is mainly due to the getter effect, i.e., the removal of the impurity atoms from the crystal bulk by the outward diffusion to the distorted surface regions.
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Journal
Journal of Materials ScienceVolume
55Issue
6Pagination
2564 - 2577Publisher
SpringerLocation
Berlin, GermanyPublisher DOI
ISSN
0022-2461eISSN
1573-4803Language
EnglishPublication classification
C1 Refereed article in a scholarly journalUsage metrics
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