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Low temperature growth of clean single layer hexagonal boron nitride flakes and film for graphene-based field-effect transistors
journal contribution
posted on 2019-01-01, 00:00 authored by Lifeng WangLifeng Wang, B Wu, H Liu, H Wang, Y Su, Weiwei LeiWeiwei Lei, P A Hu, Y LiuLow temperature growth of clean single layer hexagonal boron nitride flakes and film for graphene-based field-effect transistors
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Journal
Science China materialsVolume
62Issue
8Pagination
1218 - 1225Publisher
SpringerLocation
Beijing, ChinaPublisher DOI
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ISSN
2095-8226eISSN
2199-4501Language
engPublication classification
C1 Refereed article in a scholarly journalUsage metrics
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